A CMOS Wideband Watt-Level 4096-QAM Digital Power Amplifier Using Reconfigurable Power-Combining Transformer
نویسندگان
چکیده
In this article, a wideband watt-level digital power amplifier (DPA) with high efficiency and large dynamic range is presented in CMOS technology for wireless applications. To achieve output enhanced operation bandwidth (BW), the matching network based on reconfigurable power-combining transformer used. Meanwhile, $L$ – notation="LaTeX">$C$ circuit used to suppress harmonics, which further improves of fundamental signal. addition, LO leakage suppressed by 12-bit digital-to-analog converter (power DAC), leads proposed DPA. verify mechanism, 1.2–3.6-GHz polar DPA implemented fabricated using conventional 40-nm technology. With 1.1-/2.5-V supply, exhibits peak ( notation="LaTeX">$P_{\text {out}}$ ) 32.67 dBm, drain (DE) 45.1%, power-added (PAE) 35.5% at 2 GHz. It supports 50-MSyms/s 256-QAM average {avg}}$ 22.76 error vector magnitude (EVM) −31.46 dB, adjacent channel ratio (ACLR) −30.67 dBc, 10-MSyms/s 1024-QAM 25.54 EVM −38.2 ACLR −38.71 5-MSym/s 4096-QAM 22.97 −43.0 −46.32 respectively.
منابع مشابه
A 28-36 GHz Optimized CMOS Distributed Doherty Power Amplifier with A New Wideband Power Divider Structure
Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a ver...
متن کاملWATT GAN HEMT POWER AMPLIFIER FOR LTE 5 Watt GaN HEMT Power Amplifier for LTE
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is...
متن کاملA Transformer Noise-Canceling Ultra-Wideband CMOS Low-Noise Amplifier
Previously reported wideband CMOS low-noise amplifiers (LNAs) have difficulty in achieving both wideband input impedance matching and low noise performance at low power consumption and low supply voltage. We present a transformer noise-canceling wideband CMOS LNA based on a common-gate topology. The transformer, composed of the input and shunt-peaking inductors, partly cancels the noise origina...
متن کاملEfficient Watt-Level Power Amplifiers in Deeply Scaled CMOS
Advances in silicon processing technology have made CMOS power amplifiers a feasible option for wireless communication applications. Compared to the compoundsemiconductor counterparts, CMOS PAs become increasingly attractive due to their lower cost and higher level of integration. The continued scaling of CMOS technology further extends the cut-off frequency of CMOS devices up to several hundre...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of Solid-state Circuits
سال: 2023
ISSN: ['0018-9200', '1558-173X']
DOI: https://doi.org/10.1109/jssc.2022.3191975